BULLETIN of the

POLISH ACADEMY of SCIENCES

TECHNICAL SCIENCES

BULLETIN of the POLISH ACADEMY of SCIENCES: TECHNICAL SCIENCES
Volume 56, Issue 3, September 2008

Electronics

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pp 205 - 215

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Hydrogen and LPG sensing properties of SnO2 films obtained by direct oxidation of SILAR deposited SnS

P. MITRA and S. MONDAL
Hydrogen (H2) and liquid petroleum gas (LPG) sensing properties of SnO2 thin films obtained by direct oxidation of chemically deposited SnS films has been studied. The SnS film was prepared by a chemical technique called SILAR (Successive Ionic Layer Adsorption and Reaction). The sensor element comprises of a layer of chemically deposited SnO2 film with an overlayer of palladium (Pd) sensitiser. The Pd sensitiser layer was also formed following a chemical technique. The double layer element so formed shows significantly high sensitivity to H2 and LPG. The temperature variation of sensitivity was studied and the maximum sensitivity of 99.7% was observed at around 200°C for 1 vol% H2 in air. The response time to target gas was about 10 seconds and the sensor element was found to recover to its original resistance reasonably fast. The maximum sensitivity of 98% for 1.6 vol% LPG was observed at around 325°C. The sensor response and recovery was reasonably fast (less than one minute) at this temperature.
  
Key words: 

SILAR, SnO2 film, Pd catalyst, H2, LPG.


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Copyright ® Bulletin of the Polish Academy of Sciences: Technical Sciences

October 2008