BULLETIN of the

POLISH ACADEMY of SCIENCES

TECHNICAL SCIENCES

BULLETIN of the POLISH ACADEMY of SCIENCES: TECHNICAL SCIENCES
Volume 53, Issue 2, June 2005
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pp 113 - 122
Paper in PDF -  945 KB
 

High power QW SCH InGaAs/GaAs lasers for 980-nm band

M. BUGAJSKI , B. MROZIEWICZ, K. REGINSKI, J. MUSZALSKI, K. KOSIEL, M. ZBROSZCZYK, T. OCHALSKI, T. PIWONSKI, D. WAWER, A. SZERLING, E. KOWALCZYK, H. WRZESINSKA, and M. GORSKA
 
Strained layer InGaAs/GaAs SCH SQW (Separate Confinement Heterostructure Single Quantum Well) lasers were
grown by Molecular Beam Epitaxy (MBE). Highly reliable CW (continuous wave) 980-nm, broad contact, pump lasers were
fabricated in stripe geometry using Schottky isolation and ridge waveguide construction. Threshold current densities of the
order of Jth 280 A/cm2 (for the resonator length L = 700 um) and differential efficiency η= 0.40 W/A (41%) from one
mirror were obtained. The record wall-plug efficiency for AR/HR coated devices was equal to 54%. Theoretical estimations
of above parameters, obtained by numerical modelling of devices were
Jth 210 A/cm and η = 0.47 W/A from one mirror,
respectively. Degradation studies revealed that uncoated and AR/HR coated devices did not show any appreciable degradation
after 1500 hrs of CW operation at 35oC heat sink temperature at the constant optical power (50 mW) conditions.
 
Keywords:

laser diodes, strained-layer semiconductor lasers

 
 
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